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| IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features * Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up Protected up to 0.5A * High Peak Output Current: 2A Peak * Wide Operating Range: 4.5V to 35V * -55C to +125C Extended Operating Temperature Standard * High Capacitive Load Drive Capability: 1000pF in <10ns * Matched Rise And Fall Times * Low Propagation Delay Time * Low Output Impedance * Low Supply Current * Two Drivers in Single Chip General Description The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or CMOS compatible and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low and matched rise and fall times. The IXDN402 is configured as a dual non-inverting gate driver, the IXDI402 as a dual inverting gate driver, and the IXDF402 as a dual inverting + non-inverting gate driver. The IXDN402/IXDI402/IXDF402 family are available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA16) packages. For enhanced thermal performance, the SOIC-8 and SOIC-16 are also available with an exposed grounded backmetal package as the SI and SI-16 respectively. Applications * * * * * * * * * Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers Ordering Information Part Number Package Type Temp. Range IXDN402PI 8-Pin PDIP IXDN402SI 8-Pin SOIC with Grounded Backmetal -55C to IXDN402SIA 8-Pin SOIC +125C IXDN402SI-16 16-Pin SOIC with Grounded Backmetal IXDN402SIA-16 16-Pin SOIC IXDI402PI 8-Pin PDIP IXDI402SI 8-Pin SOIC with Grounded Backmetal -55C to IXDI402SIA 8-Pin SOIC +125C IXDI402SI-16 16-Pin SOIC with Grounded Backmetal IXDI402SIA-16 16-Pin SOIC IXDF402PI 8-Pin PDIP IXDF402SI 8-Pin SOIC with Grounded Backmetal -55C to IXDF402SIA 8-Pin SOIC +125C IXDF402SI-16 16-Pin SOIC with Grounded Backmetal IXDF402SIA-16 16-Pin SOIC NOTE: Mounting or solder tabs on all packages are connected to ground Configuration Dual Non Inverting Dual Inverting Inverting + Non Inverting Copyright (c) IXYS CORPORATION 2004 DS99015B(08/04) First Release IXDN402 / IXDI402 / IXDF402 Figure 1 - IXDN402 Dual 2A Non-Inverting Gate Driver Functional Block Diagram Vcc IN A ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N IN B ANTI-CROSS CONDUCTION CIRCUIT * P OUT B N GND Figure 2 - IXDI402 Dual Inverting 2A Gate Driver Functional Block Diagram Vcc IN A ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N IN B ANTI-CROSS CONDUCTION CIRCUIT * P OUT B N GND Figure 3 - IXDF402 Inverting + Non-Inverting 2A Gate Driver Functional Block Diagram Vcc IN A ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N IN B ANTI-CROSS CONDUCTION CIRCUIT * P OUT B N GND * Patent Pending 2 IXDN402 / IXDI402 / IXDF402 Absolute Maximum Ratings (Note 1) Parameter Supply Voltage All Other Pins Junction Temperature Storage Temperature Lead Temperature (10 sec) Value 40 V -0.3 V to VCC + 0.3 V 150 oC -65 oC to 150 oC 300 oC Operating Ratings Parameter Operating Temperature Range -55 oC to 125 oC Value Thermal Resistance (Junction to Case) (JC) 8 Pin SOIC (SI) 10 K/W 16 Pin SOIC (SI-16) 10 K/W Thermal Resistance (To Ambient) 8 Pin PDIP (PI) (JA) 130 K/W 8 Pin SOIC (SIA) 120 K/W 16 Pin SOIC (SIA-16) (JA) 120 K/W JA with heat sink ** Heat sink area of 1 cm2 8 Pin SOIC 100 K/W 16 Pin SOIC-CT 100 K/W 2 Heat sink area of 3 cm 8 Pin SOIC 90 K/W 16 Pin SOIC-CT 90 K/W ** Device soldered to metal back pane. Heat sink area is 1 oz. copper on 1 side of 0.06" thick FR4 PC board. Electrical Characteristics Unless otherwise noted, TA = 25 oC, 4.5V VCC 35V . All voltage measurements with respect to GND. IXDD402 configured as described in Test Conditions. All specifications are for one channel. Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF tONDLY tOFFDLY VCC ICC Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current Continuous output current Rise time Fall time On-time propagation delay Off-time propagation delay Power supply voltage Power supply current Test Conditions 4.5V VCC 18V 4.5V VCC 18V Min 3 Typ Max 0.8 Units V V V A V -5 0V VIN VCC -10 VCC - 0.025 VCC + 0.3 10 0.025 VCC = 18V VCC = 18V VCC is 18V 3.7 2.5 2 1 CL=1000pF Vcc=18V CL=1000pF Vcc=18V CL=1000pF Vcc=18V CL=1000pF Vcc=18V 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 8 8 28 26 18 1 0 10 9 32 30 35 3 10 10 4 3 V A A ns ns ns ns V mA A A Specifications Subject To Change Without Notice Note 1: Operating the device beyond the parameters listed as "Absolute Maximum Ratings" may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 3 IXDN402 / IXDI402 / IXDF402 Electrical Characteristics Unless otherwise noted, temperature over -55oC to 150oC, 4.5V VCC 35V . All voltage measurements with respect to GND. IXDD402 configured as described in Test Conditions. All specifications are for one channel. Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF tONDLY tOFFDLY VCC ICC Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current Continuous output current Rise time Fall time On-time propagation delay Off-time propagation delay Power supply voltage Power supply current Test Conditions 4.5V VCC 18V 4.5V VCC 18V Min 3.1 Typ Max 0.8 Units V V V A V -5 0V VIN VCC -10 VCC - 0.025 VCC + 0.3 10 0.025 VCC = 18V VCC = 18V VCC = 18V 1.5 1 CL=1000pF Vcc=18V CL=1000pF Vcc=18V CL=1000pF Vcc=18V CL=1000pF Vcc=18V 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 18 1 0 13 12 40 38 35 3 10 10 7 5 V A A ns ns ns ns V mA A A Specifications Subject To Change Without Notice 4 IXDN402 / IXDI402 / IXDF402 Pin Description SYMBOL IN A GND IN B OUT B VCC OUT A FUNCTION A Channel Input Ground B Channel Input B Channel Output Supply Voltage A Channel Output DESCRIPTION A Channel Input signal-TTL or CMOS compatible. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. B Channel Input signal-TTL or CMOS compatible. B Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 35V. A Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD procedures when handling and assembling this component. Figure 4 - Characteristics Test Diagram Vcc 10uF 25V 4 1 NC 2 In A 3 Gnd In B NC 8 7 Out A Vcc 6 Out B 5 Agilent 1147A Current Probe 1000 pF Agilent 1147A Current Probe 1000 pF 5 IXDN402 / IXDI402 / IXDF402 Typical Performance Characteristics Fig. 5 90 80 Rise Time vs. Supply Voltage CL = 100pF to 6800pF Fig. 6 60 Fall Time vs. Supply Voltage CL = 100pF to 6800pF 50 70 Rise Time (ns) 50 40 30 Fall Time (ns) 60 6800 pF 40 6800 pF 30 20 3900 pF 2200 pF 1000 pF 100 pF 3900 pF 20 2200 pF 10 0 5 10 15 20 25 30 35 1000 pF 100 pF 10 0 5 10 15 20 25 30 35 Supply Voltage (V) Fig. 7 12 Supply Voltage (V) Fig. 8 Rise And Fall Times vs. Case Temperature CL = 1000pF, Vcc = 18V Output Rise Times vs. Load Capacitance 90 80 8V 10V 12V 18V 50 40 30 20 25V 35V 10 tR 70 tF 6 4 2 Rise Time (ns) 8 60 Time (ns) 10 0 -60 -10 40 90 140 190 0 0 1000 2000 3000 4000 5000 6000 7000 Temperature (C) Fig. 9 50 45 40 35 Load Capacitance (pF) Fig. 10 8V 10V 12V 18V 25V 35V Output Fall Times vs. Load Capacitance Max / Min Input vs. Temperature CL = 1000 pF Vcc = 18V 3.5 3.3 Max / Min Input Voltage 3.1 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 Minimum Input High Fall Times (ns) 30 25 20 15 10 5 0 0 1000 2000 3000 4000 5000 6000 7000 Maximum Input Low -60 -10 40 90 140 190 Load Capacitance (pF) Temperature (C) 6 IXDN402 / IXDI402 / IXDF402 Fig. 11 100 90 80 100 Supply Current vs. Load Capacitance Vcc = 8V Fig. 12 2 MHz 1000 S u p p ly C u r r e n t v s . F r e q u e n c y Vcc = 8V 6800 pF 3900 pF 2200 pF 1000 pF Supply Current (mA) 70 Supply Current (ma) 470 pF 10 100 pF 60 50 40 30 20 1 MHz 1 500 kHz 0 .1 10 0 100 100 kHz 50 kHz 10 kHz H 1000 10000 0 .0 1 1 10 100 1000 10000 Load Capacitance (pF) Fig. 13 100 90 80 70 60 50 F re q u e n c y (k H z ) Supply Current vs. Load Capacitance Vcc = 12V 2 MHz 1 Mhz Fig. 14 1000 Supply Current vs. Frequency Vcc = 12V 6800 pF 3900 pF 2200 pF 1000 pF 470 pF 100 pF 100 Supply Current (ma) Supply Current (mA) 10 500 kHz 40 30 20 10 0 100 1 0.1 100 kHz 50 kHz 10 kHz 1000 10000 0.01 1 10 100 1000 10000 Load Capacitance (pF) Fig. 15 100 90 80 70 60 50 40 30 20 10 0 100 Frequency (kHz) Fig. 16 1 MHz Supply Current vs. Load Capacitance Vcc = 18V 2 MHz Supply Current vs. Frequency Vcc = 18V 6800 pF 3900 pF 2200 pF 1000 pF 470 pF 100 pF 1000 100 500 kHz Supply Current (ma) Supply Current (mA) 10 1 100 kHz 50 kHz 10 kHz 1000 10000 0.1 0.01 1 10 100 1000 10000 Load Capacitance (pF) Frequency (kHz) 7 IXDN402 / IXDI402 / IXDF402 Fig. 17 100 90 80 70 60 50 40 30 20 50 kHz 10 10 kHz 0 100 1000 10000 0.01 1 10 100 1000 10000 100 Supply Current vs. Load Capacitance Vcc = 35V Fig. 18 1000 Supply Current vs. Frequency Vcc = 35V 6800 pF 3900 pF 2200 pF 1000 pF 100 pF Supply Current (mA) Supply Current (mA) 2 MHz 1 MHz 500 kHz 10 1 100 kHz 0.1 Load Capacitance (pF) Fig. 19 50 45 Frequency (kHz) Fig. 20 50 45 40 35 30 25 20 15 10 5 0 tOFFDLY Propagation Delay vs. Supply Voltage CL=1000 pF Vin=5V@1KHz Propagation Delay vs. Input Voltage CL = 1000 pF Vcc = 15V Propagation Delay (ns) Propagation Delay (ns) 40 35 30 25 20 15 10 5 0 5 10 15 20 25 30 35 tONDLY tOFFDLY tONDLY 2 3 4 5 6 7 8 9 10 11 12 Supply Voltage (V) Fig. 21 45 Input Voltage (V) Fig. 22 0.8 Propagation Delay Times vs. Temperature CL = 1000pF, Vcc = 18V Quiescent Supply Current vs. Temperature Vcc = 18V, Vin = 5V@1kHz, CL = 1000pF Quiescent Vcc Input Current (ma) 40 tONDLY 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 35 Time (ns) 30 tOFFDLY 25 20 15 10 -60 -10 40 90 140 190 -60 -10 40 90 140 190 Temperature (C) 8 Temperature (C) IXDN402 / IXDI402 / IXDF402 Fig. 23 Fig. 24 High State Output Resistance vs. Supply Voltage 8 Low State Output Resistance vs. Supply Voltage 9 Low State Output Resistance (Ohms) 5 10 15 20 25 30 35 High State Output Resistance (Ohms) 7 6 5 4 3 2 1 0 8 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 Supply Voltage (V) Supply Voltage (V) Fig. 26 Fig. 25 0 Vcc vs. P Channel Output Current 7 Vcc vs. N Channel Output Current P Channel Output Current (A) -1 N Channel Output Current (A) 6 5 -2 4 -3 3 -4 2 -5 1 -6 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 Vcc (V) Fig. 27 P Channel Source Output Current vs. Temperature Vcc (V) Vcc = 18V, CL = 1000 pF 4 Fig. 28 4 .5 4 N C h a n n e l O u tp u t C u rre n t v s . T e m p e ra tu re V cc = 18V C L = 1000 pF P Channel Output Current (A) 3.5 N Channel Output Current (A) 3 2.5 2 1.5 1 0.5 0 -80 -30 3 .5 3 2 .5 2 1 .5 1 0 .5 0 Temperature (C) 20 70 120 170 -8 0 -3 0 20 70 120 170 T e m p e ra tu re (C ) 9 IXDN402 / IXDI402 / IXDF402 PIN CONFIGURATIONS 1 2 3 4 NC IN A GND INB NC OUT A 8 7 1 2 3 4 NC IN A GND INB NC OUT A 8 7 1 2 3 4 NC IN A GND INB NC OUT A 8 7 VS 6 OUT B 5 VS 6 OUT B 5 VS 6 OUT B 5 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDN402 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDI402 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDF402 1 NC 2 IN A 3 NC 4 GND 5 GND 6 NC 7 IN B 8 NC NC 16 OUT A 15 OUT A 14 VCC 13 VCC 12 OUT B 11 OUT B 10 NC 9 1 NC 2 IN A 3 NC 4 GND 5 GND 6 NC 7 IN B 8 NC NC 16 OUT A 15 OUT A 14 VCC 13 VCC 12 OUT B 11 OUT B 10 NC 9 1 NC 2 IN A 3 NC 4 GND 5 GND 6 NC 7 IN B 8 NC NC 16 OUT A 15 OUT A 14 VCC 13 VCC 12 OUT B 11 OUT B 10 NC 9 16 Pin SOIC IXDN402SI-16 16 Pin SOIC IXDI402SI-16 16 Pin SOIC IXDF402SI-16 Supply Bypassing, Grounding Practices And Output Lead inductance When designing a circuit to drive a high speed MOSFET utilizing the IXDN402/IXDI402/IXDF402, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, we are using the IXDN402 to charge a 1500pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= V C / t, where V=25V C=1500pF & t=25ns, we can determine that to charge 1500pF to 25 volts in 25ns will take a constant current of 1.5A. (In reality, the charging current won't be constant, and will peak somewhere around 2A). SUPPLY BYPASSING In order for our design to turn the load on properly, the IXDN402 must be able to draw this 1.5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is an order of magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected and should have low inductance, low resistance and high-pulse current-service ratings). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN402 to an absolute minimum. 10 GROUNDING In order for the design to turn the load off properly, the IXDN402 must be able to drain this 1.5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN402 and its load. Path #2 is between the IXDN402 and its power supply. Path #3 is between the IXDN402 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN402. OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and its load as short and wide as possible. If the driver must be placed farther than 2" (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminal of the load. IXDN402 / IXDI402 / IXDF402 IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: sales@ixys.net www.ixys.com IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: marcom@ixys.de Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: deiinfo@directedenergy.com www.directedenergy.com 11 |
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